PART |
Description |
Maker |
K7N323601M-QC20 K7N323601M DSK7N323601M K7N323645M |
1Mx36 & 2Mx18 Flow-Through NtRAM 1Mx36 & 2Mx18-Bit Pipelined NtRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K7K3236U2C K7K3218U2C-EC330 K7K3218U2C-FC330 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM DDR SRAM, PBGA165 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
|
Samsung semiconductor Maxim Integrated Products, Inc.
|
IS61QDP2B21M36A1 IS61QDP2B21M36A2 |
1Mx36 and 2Mx18 configuration available
|
Integrated Silicon Solu...
|
K7D321874C K7D323674C |
1Mx36 & 2Mx18 SRAM
|
Samsung semiconductor
|
K7S3236U4C |
1Mx36 & 2Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
K7R320982C K7R323682C-FC20 K7R323682C-FC25 K7R3236 |
1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7N323601MK7N321801M |
1Mx36 & 2Mx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
K7A323630C K7A321830C K7A321830C-PC20 K7A321830C-P |
1M X 36 CACHE SRAM, 3.1 ns, PQFP100 1Mx36 and 2Mx18 Synchronous SRAM
|
SAMSUNG[Samsung semiconductor]
|
IS61DDPB22M36 IS61DDPB22M36-375M3 IS61DDPB22M36-37 |
72 Mb (2M x 36 & 4M x 18) DDR-IIP (Burst of 2) CIO Synchronous SRAMs
|
Integrated Silicon Solution, Inc
|
IS61DDP2B21M18A/A1/A2 IS61DDP2B251236A/A1/A2 |
1Mx18, 512Kx36 18Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
IS61DDPB21M18A IS61DDPB21M18A/A1/A2 IS61DDPB251236 |
1Mx18, 512Kx36 18Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|